MULTICONTACT ELECTRIC JUNCTION Russian patent published in 2003 - IPC

FIELD: microelectronics; hybrid integrated circuits. SUBSTANCE: multicontact junction has mating contacts built of two parts disposed on two different semiconductor substrates bearing integrated-circuit components and oriented in opposition to each other. First parts of mating contacts mounted on first semiconductor substrate are convex in shape and have planar pad on top; second parts of mating contacts disposed on second semiconductor substrate whose coefficient of thermal expansion is other than that of first substrate have depressions whose bottom is made in the form of planar contact pad; first parts of mating contacts enter with their top planar pad into depressions of second parts of mating contacts thereby making electrical junction. Cross- sectional area of depressions in some of second parts of mating contacts is greater than that of convex forms of first parts of mating contacts by value sufficient to afford shift of first parts relative to second ones in case of temperature variations and cross-sectional area of depressions in remaining second parts is equal to that of convex forms of first parts. EFFECT: enhanced fracture stability of contacts. 1 cl, 1 dwg