INDIUM MICROCONTACTS FOR HYBRID MICROCIRCUIT Russian patent published in 2011 - IPC H01L23/48 

Abstract RU 2411610 C1

FIELD: physics.

SUBSTANCE: indium microcontacts for a hybrid microcircuit connect two parts of a hybrid microcircuit which consists of a first and a second part. There are metallic layers sandwiching an indium layer on the inner surfaces of the first and second parts of the hybrid microcircuits. A tin layer is made inside the indium layer such that, there is no indium oxide film on the intermetallic indium-tin boundaries.

EFFECT: high strength of indium microcontacts owing to exclusion of an indium oxide film in the intermetallic connection of microcontacts, simple and cheap manufacturing of the microcontacts due to avoiding use of a gold layer when making the contacts.

2 dwg

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RU 2 411 610 C1

Authors

Efimov Valerij Mikhajlovich

Dates

2011-02-10Published

2009-12-22Filed