READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICES Russian patent published in 2003 - IPC

Abstract RU 2216055 C2

FIELD: electrically addressed nonvolatile read-only memory. SUBSTANCE: electrically addressed nonvolatile read-only memory that provides for multilayer coding of desired locations or their addresses has set of memory locations, passive matrix incorporating parallel electrodes, vertical and horizontal buses, semiconductor material, and insulating material. Read-only memory device has one or more electrically addressed nonvolatile read-only memories, as well as master and control circuits. EFFECT: provision for developing three-dimensional memory device. 26 cl, 16 dwg

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RU 2 216 055 C2

Authors

Gudesen Khans Gude

Nordal' Per-Ehrik

Lejstad Gejrr I.

Dates

2003-11-10—Published

1998-08-28—Filed