SEMICONDUCTOR INFRARED RADIATOR Russian patent published in 2003 - IPC

FIELD: semiconductor optoelectronics; infrared sources. SUBSTANCE: proposed semiconductor infrared radiator designed for operation in intermediate-frequency infrared band of 2-5 mcm has electromagnetic radiation source with wavelength of 0.8-1.5 mcm and multilayer structure applied to substrate made of material transparent for mentioned radiation that functions to convert this radiation into infrared rays of greater wavelength between 2 and 5 mcm. Used as electromagnetic radiation source is light-emitting diode or semiconductor microlaser; multilayer structure converting this radiation into that of higher wavelength is built up of semiconductor layers having different forbidden gaps ranging between 0.2 and 0.6 eV and disposed sequentially starting from first layer whose forbidden gap is between ΔE₁ to ΔE_n in order of its increase ΔE₁<...<ΔE_n, where n is integer number of 2 to 20, 100 to 5000 thick. Semiconductor layers are spaced apart by means of oxide film, 50 to 1000 thick. Extreme oxide film is covered with immersion layer to raise output power as well as temperature and time stability of radiator. Semiconductor radiating structure may be connected through immersion layer to strip whereon interference filter is formed. EFFECT: enhanced reliability, stability and coefficient of pumping-to-electromagnetic radiation conversion. 3 cl, 11 dwg