FIELD: medicine.
SUBSTANCE: method involves irradiating skin regions with terahertz bandwidth radiation from 0.02 to 8 THz frequency. Infrared radiation from 1 to 56 mcm is used as carrier for the above radiation. Panel for carrying out treatment and tissue recovery has n radiators being silicon photodiodes producing total mean luminous flow power of the radiators is not greater than 300 mW/m2. The radiator for carrying out treatment and tissue recovery has terahertz bandwidth radiation source like semiconductor silicon photodiode producing infrared radiation by means of luminous matrices of planar silicon structures. Silicon p-type quantum wells self-organized inside ultra-small diffusion boron profiles produced on monocrystalline silicon (100) of n-type conductivity. P-n transition works as luminous element being silicon self-organized p-type quantum wells cascade through which modulated quant wire passes. Quantum-dimensional p-n transition takes places in self-organized silicon microresonator. Terahertz bandwidth radiation frequency is supported by selecting geometric pattern of topographic surface image of ultra-small diffusion boron profiles in silicon with superficial deformation potential fluctuations bringing to self-organized silicon microresonators formation with distributed feedback in self-organized quantum wells plane. Modulation depth is ensured by voltage magnitude applied both along and in perpendicular to diffusion profile plane.
EFFECT: enhanced effectiveness in healing injured biological tissues.
6 cl, 9 dwg
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Authors
Dates
2008-01-20—Published
2005-07-20—Filed