METHOD FOR MAKING DIODES FOR MIDDLE-WAVE IR RANGE OF SPECTRUM Russian patent published in 2018 - IPC H01L31/18 

FIELD: electrical engineering; optics.

SUBSTANCE: invention relates to optoelectronic technology, namely to semiconductor devices intended for detecting and emitting infrared (IR) radiation at room temperature. Method for manufacturing diodes for the medium-wave infrared spectrum includes growing semiconductor layers, at least one of which absorbs/emits photons with an energy of 0.2–0.6 eV, carrying out photolithography and deposition on the semiconductor layers of n- and p-type sequences of metallic contact layers of a given geometry, At least one of which contains a noble metal and impurities, and at least one of which contains nickel and impurities, the ignition of contact layers at a temperature of 310–400 °C. In this case, the said sputtering on the p-type conductivity layer begins with the deposition of an alloy containing silver (80–97)% by mass and manganese (3–20) by weight, then a layer containing nickel and impurities and a gold layer with impurities are subsequently sprayed.

EFFECT: method for production of diodes for medium-wave IR spectrum is proposed.

8 cl, 5 dwg, 3 tbl