METHOD FOR PRODUCING GERMANIUM NANOISLANDS ON VICINAL SILICON SURFACE Russian patent published in 2003 - IPC

FIELD: nanoelectronics. SUBSTANCE: proposed method intended to produce structures with germanium nanoislands (quantum points) on vicinal silicon (III) surface for developing superhigh-speed semiconductor devices as well as some optoelectronic devices around them includes annealing of vicinal surface of silicon substrate during preepitaxial preparation stage and in the course of evaporation by passing dc current in direction perpendicular to front of vicinal silicon edge. EFFECT: enhanced density and ordering, as well as improved structure of germanium nanoislands on vicinal silicon surface. 1 cl, 2 dwg