METHOD TO FORM EPITAXIAL FILMS OF COBALT ON SURFACE OF SEMICONDUCTOR SUBSTRATES Russian patent published in 2012 - IPC H01F10/16 H01F41/30 B82B3/00 

FIELD: electricity.

SUBSTANCE: method to form epitaxial films of cobalt on the surface of semiconductor substrates includes application of a buffer copper sublayer onto the atomically clean surface Si(111)7×7 under conditions of ultrahigh vacuum at ambient temperature, further generation in the mode of layerwise growth of ultrathin epitaxial films of Co(111)/Cu(111)/Si(111)7×7 with thickness from 1 to 6 monolayers (ML) under the same conditions in the case when the thickness of the buffer copper sublayer makes 3.5 ML. At the thickness of the copper buffer layer from 4.5 and to 11.5 ML, arrays of epitaxial nanoislands of cobalt with monatomic and biatomic height are formed to the value of cobalt coating of the monolayer 3.

EFFECT: invention provides for the possibility of controlled generation of epitaxial cobalt nanostructures on a surface of a semiconductor substrate of silicon with specified magnetic properties, which is a technical result of the invention.

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