METHOD OF MAKING LIGHT-EMITTING ELEMENT Russian patent published in 2013 - IPC H01L33/26 H01S5/30 B82B3/00 

FIELD: physics.

SUBSTANCE: diode light-emitting structure is formed on monocrystalline silicon with surface orientation (111) or (100). The active zone of the light-emitting element is nanosized crystallites (nanocrystallites) of semiconductor iron disilicide, which are elastically embedded in monocrystalline epitaxial silicon. Before forming the active zone, the substrate is coated with a layer of undoped silicon for spatial separation thereof from the substrate (buffer layer). Nanocrystallites are formed during epitaxial refilling of nanoislands of semiconductor iron disilicide formed on the buffer layer by molecular beam epitaxy. Use of special operating parameters, according to the invention, provides high concentration of nanocrystallites in the active zone.

EFFECT: high luminous efficacy of the light-emitting element by enabling reduction of the size of crystallites of semiconductor iron disilicide and providing high density thereof and therefore elastic embedding into a silicon matrix and considerable tension in the inner structure of crystallites.

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