METHOD OF MAKING LIGHT-EMITTING ELEMENT Russian patent published in 2013 - IPC H01L33/26 H01S5/30 

FIELD: physics.

SUBSTANCE: light-emitting diode structure is formed on monocrystalline silicon with surface orientation (111) or (100). The active zone of the light-emitting element is nanosized crystallites (nanocrystallites) of semiconductor iron disilicide, which are elastically embedded in monocrystalline epitaxial silicon. Before forming the active zone, the substrate is coated with a layer of undoped silicon for spatial separation of the active zone from the substrate (buffer layer). Nanocrystallites are formed during epitaxial refilling of nanoislands of semiconductor iron disilicide formed on the buffer layer by molecular beam epitaxy. Use of special operating parameters provide high concentration of nanocrystallites in the active zone.

EFFECT: high efficiency of the light-emitting element by enabling reduction of the size of crystallites of semiconductor iron disilicide β-FeSi₂ with high density and therefore elastic embedding thereof into a silicon matrix and high stress in the internal structure.

2 cl, 8 dwg