METHOD OF MAKING LIGHT-EMITTING ELEMENT Russian patent published in 2013 - IPC H01L33/26 H01S5/30 

Abstract RU 2485632 C1

FIELD: physics.

SUBSTANCE: light-emitting diode structure is formed on monocrystalline silicon with surface orientation (111) or (100). The active zone of the light-emitting element is nanosized crystallites (nanocrystallites) of semiconductor iron disilicide, which are elastically embedded in monocrystalline epitaxial silicon. Before forming the active zone, the substrate is coated with a layer of undoped silicon for spatial separation of the active zone from the substrate (buffer layer). Nanocrystallites are formed during epitaxial refilling of nanoislands of semiconductor iron disilicide formed on the buffer layer by solid-phase epitaxy. Use of special operating parameters provide high concentration of nanocrystallites in the active zone.

EFFECT: high efficiency of the light-emitting element by enabling reduction of the size of crystallites of semiconductor iron disilicide β-FeSi2 and providing high density thereof and therefore elastic embedding into a silicon matrix and considerable stress in the internal structure of crystallites.

2 cl, 8 dwg

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RU 2 485 632 C1

Authors

Galkin Nikolaj Gennad'Evich

Goroshko Dmitrij L'Vovich

Chusovitin Evgenij Anatol'Evich

Dates

2013-06-20Published

2012-01-19Filed