METHOD OF MAKING LIGHT-EMITTING ELEMENT Russian patent published in 2013 - IPC H01L33/18 H01S5/30 B82B3/00 

FIELD: physics.

SUBSTANCE: diode light-emitting structure is formed on monocrystalline silicon with surface orientation (111) or (100). The active zone of the light-emitting element is nano-sized crystallites (nanocrystallites) of semiconductor iron disilicide, elastically embedded into monocrystalline epitaxial silicon. Before forming the active zone, the substrate is coated with a layer of undoped silicon for spatial separation thereof from the substrate (buffer layer). Nanocrystallites are formed during epitaxial refilling of nanoislands of semiconductor iron disilicide formed on the buffer layer by molecular beam epitaxy. Use of special operating parameters provides high concentration of nanocrystallites in the active zone. The cycle, which includes forming nanoislands and subsequent aggregation thereof into nanocrystallites, is repeated several times, enabling to form a multilayer active structure.

EFFECT: increasing luminous efficacy of the light-emitting element by enabling reduction of the size of crystallites of semiconductor iron disilicide and providing high density thereof, thereby enabling elastic embedding into a silicon matrix and considerable tension in the inner structure of crystallites, high intensity of the light-emitting element due to a larger volume of the active zone.

2 cl, 11 dwg