FIELD: technology of manufacture of film materials, study of physical properties, control over parameters of diffusion processes in thin films. SUBSTANCE: procedure includes application of film of diffusible element on surface of metal, action stimulating diffusion, determination of change of concentration of element in metal and calculation of diffusion coefficient by concentration dependence. Simultaneous determination of change of concentration of element in metal and film before and after action stimulating diffusion is conducted. Diffusion coefficients of element in metal and film is computed by change of concentration dependence of distribution of element in metal and film with due account of thickness of element film. Concentration of element in metal and film and film thickness are established by their irradiation with proton flux and measurement of flux and energy of backscattered protons. Irradiation is carried out by proton flux with energy required for resonance nuclear reaction of element and flux of secondary gamma quanta is measured. EFFECT: applicability of this simplified procedure for film materials. 1 cl
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Authors
Dates
2003-09-10—Published
2002-04-18—Filed