FIELD: electrical engineering, technological machining of wafers by method of plasma etching. SUBSTANCE: system for realization of invention has technological chamber including gear to fix wafer and pair of sources of radio wave radiation. In another case electrode of system can be grounded and both frequencies of radio wave radiation are supplied to gear to fix wafer. Thus mix of system incorporates electrode installed inside system above wafer. Electrode includes central region, first and second surfaces. First surface is meant to take in process gases from source that is placed outside of system and to direct process gases into central region. Assemblage of gas-supplying holes is made in second surface which are connected to electrode holes whose diameter exceeds diameter of gas-supplying holes. All electrode holes form electrode surface which is formed above surface of wafer. Such electrode surface makes it feasible to enlarge area of surface of screening layer of plasma on side of electrode to secure shift of bias voltage on surface of wafer increasing by that energy of ions bombarding wafer without growth of plasma density which is technical result of invention. EFFECT: increased energy of ions bombarding wafer without growth of plasma density. 32 cl, 14 dwg
