PLASMA TREATMENT CHAMBER AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE IN THE CHAMBER Russian patent published in 2004 - IPC

FIELD: electric engineering.

SUBSTANCE: device has electrostatic holder for holding plate, and consumption parts highly resistant to etching and susceptible to impurity production in lower degree. Their temperature is controllable. The consumption parts have chamber insert having lower fastening section and wall arranged so that it envelops the electrostatic holder. The consumption parts also have insert holder having lower flange, flexible wall and upper flange. The flexible wall arranged so that it envelops external surface of the chamber insert holder, the flexible wall being at some distance from the chamber insert holder. Lower flange of the insert holder is allows direct heat exchange with the lower section of the chamber insert holder. Reflection ring is a consumption part mounted in heat exchange contact with the chamber insert and the insert holder.

EFFECT: wide range of functional applications.

24 cl, 13 dwg