PROCESS OF RESIST REMOVAL IN A PLANT FOR ETCHING DIELECTRIC USING A PLASMA BEAM Russian patent published in 2006 - IPC H01J37/305 H01L21/3065 

FIELD: engineering of semiconductor devices.

SUBSTANCE: invention concerns method and device for etching dielectric, removing etching mask and cleaning etching chamber. In etching chamber 40 semiconductor plate 56 is positioned. Dielectric 58 made on semiconductor plate is subjected to etching, using local plasma, produced by special device for producing local plasma during etching process. Mask for etching 60 is removed by means of plasma from autonomous source 54, generated in device for producing plasma from autonomous source connected to etching chamber. Etching chamber after removal of semiconductor plate is subjected to cleaning, using either local plasma, or plasma from autonomous source. To achieve higher level of cleaning, it is possible to utilize a heater, providing heating for chamber wall.

EFFECT: increased efficiency.

2 cl, 4 dwg