METHOD OF MAKING MAGNETORESISTIVE EFFECT ELEMENT AND MULTICHAMBER DEVICE FOR MAKING MAGNETORESISTIVE EFFECT ELEMENT Russian patent published in 2010 - IPC H01L43/12 

FIELD: physics.

SUBSTANCE: invention can be used in magnetoresistive random access memory (MRAM) as integrated magnetic memory or in a thin-film magnetic head, as well as in a multichamber device for making a magnetoresistive effect element. The method of making a magnetoresistive effect element a fist step: of preparing a magnetoresistive effect element including a magnetic film and a substrate; a second step: of etching a given region of the magnetic film by a reactive ion etching method in the presence of a hydrogen atom and an oxygen atom activated by plasma; a third step: of exposing the magnetic film having undergone the second step to a plasma at an ion current density of not more than 4x10^-7 A/cm², wherein the third step includes a plasma formation step by supplying a reducing gas, a step for removing ions and electrons from the plasma formed at the plasma formation step by passing the plasma through a first element having a several through-holes, and an exposure step of exposing the magnetic film to a plasma which is adjusted to the ion current density through the removal step and mainly contains a radical, thereby reducing the oxygen atom bonded to the magnetic film.

EFFECT: invention prevents worsening of magnetic characteristics of a multiple-layer magnetic film having a damaged layer and enables to make high quality magnetoresistive effect elements.

7 cl, 9 dwg