SEMICONDUCTIVE GAS GAUGE Russian patent published in 2004 - IPC

Abstract RU 2241982 C2

FIELD: gas analyzing.

SUBSTANCE: gas gauge has semiconductive base made of monocrystal plate made from indium phosphide. The surface of the plate is provided with metal electrodes. The pressure gauge is used for determining microconcentrations of oxygen.

EFFECT: enhanced sensitivity.

3 dwg

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RU 2 241 982 C2

Authors

Kirovskaja I.A.

Dates

2004-12-10Published

2003-01-04Filed