SEMICONDUCTOR AVALANCHE DETECTOR Russian patent published in 2024 - IPC H01L31/06 

FIELD: physics.

SUBSTANCE: use for detection of weak flows of electromagnetic radiation and nuclear particles. Semiconductor avalanche detector includes a semiconductor substrate with a semiconductor layer and an array of separate semiconductor regions with high conductivity, which forms a p-n junction with the semiconductor layer, wherein on the free surface of the semiconductor layer a highly doped semiconductor layer is formed, having the same conductivity type as the semiconductor layer, and the matrix of separate semiconductor regions with high conductivity is located at the boundary of the highly doped semiconductor layer with the semiconductor layer.

EFFECT: providing the possibility of increasing radiation resistance and increasing sensitivity of the avalanche semiconductor detector.

1 cl, 3 dwg