SEMICONDUCTOR AVALANCHE PHOTODETECTOR Russian patent published in 2018 - IPC H01L31/107 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor devices, specifically to semiconductor avalanche photodetectors with internal signal amplification, and can be used to record weak fluxes of light quanta, gamma rays, and charged nuclear particles. Avalanche semiconductor photodetector includes a semiconductor layer of the first type of conductivity, on the surface of which a plurality of semiconductor regions of the second type of conductivity are made, on the part of the surface of which there are individual emitters forming potential barriers with semiconductor regions, first and second conductive plates separated from the semiconductor layer by a dielectric layer, individual micro-resistors connecting the semiconductor regions to the first conductive plate, and additional individual micro-resistors connecting the individual emitters to the second conductive plate, at the same time along the entire perimeter of each semiconductor area, an individual security ring is made, and an additional semiconductor region of the first type of conductivity with an increased concentration of dopant impurities is formed between each semiconductor region and the semiconductor layer in comparison with the semiconductor layer.

EFFECT: invention is aimed at increasing the sensitivity and improving the performance of a semiconductor avalanche photodetector.

9 cl, 1 dwg