FIELD: electricity.
SUBSTANCE: in a tunnel field effect transistor with an insulated gate containing electrodes of source and drain made of multilayer graphene and located at an insulating substrate in the same plane, and also the gate made of a conducting material and located above the areas of source, tunnel junction and drain, electrodes of source and drain are oriented towards each other crystallographically by an even edge of a zigzag type and separated by a vacuum barrier transparent for charge carriers.
EFFECT: invention expands the inventory of tunnel transistor nanodevices; this device alongside its pronounced switching property has on the current-voltage curve of the source and drain electrodes the area with a negative differential resistance, which allows its functioning as the Gunn diode; the device requires lower voltage at the gate.
2 dwg
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