GA-AS BASE SEMICONDUCTOR CHARGE-PARTICLE DETECTOR Russian patent published in 1997 - IPC

FIELD: semiconductor and nuclear instrumentation engineering. SUBSTANCE: Ga-as base semiconductor charge-particle detector has Ga-as substrate carrying n⁺ and p⁺ layers and electrodes on opposite sides; chosen orientation of Ga-As crystal is /100/; n⁺ layer is covered with additional layer of material whose relative variation in lattice parameters da/a is higher than that of substrate; p⁺ layer is made of material whose variation in lattice parameters is lower than that of substrate; thickness and composition of additional p⁺ layer is chosen so that mechanical stress in substrate does not exceed critical value above which epitaxial dislocation is formed. Additional layer applied onto n⁺ layer may be made of material whose relative change in lattice parameters d_a/a = +(1-5)10^-4. Used for additional layer covering n⁺ layer is solid solution In_xGa_1-xAs with 0< x <1.. Carbon is used in p⁺ layer as acceptor dope of N_A=10¹⁹sm^-3 composition. Germanium of n⁺ concentration is used as donor for N_α= 10¹⁸sm^-3 layer. EFFECT: improved design. 4 cl, 1 dwg