PROCESS FORMING LATTICE OF SILICON NANOCLUSTERS ON STRUCTURIZED SUBSTRATE Russian patent published in 2003 - IPC

FIELD: quantum electronics, optoelectronics. SUBSTANCE: invention is related to technology forming lattice of silicon nanoclusters which base of instrumentation engineering. Salient feature of invention lies in cleaning of silicon substrate, in its masking and nanolithography so carried out that boundaries of masking sections are oriented at angle of 45 degrees with base cut [ 110 ] of substrate, in structurization of substrate surface by etching with formation of lattice from silicon columns, in removal of masking layer, in formation of lattice of nanoclusters on structurized substrate by thermal oxidation of its structurized surface with constant rise of temperature in surface region to temperature above 900 C with temperature rise gradient not less than 10⁶ K/cm with formation of lattice of silicon nanoclusters inside silicon dioxide, in cooling of substrate to room temperature with same constant gradient not less than 10⁶ K/cm, in repetition of heating and cooling cycles till closed shell of silicon dioxide is formed and final firing of substrate with lattice of nanoclusters in closed shell of silicon dioxide in atmosphere of nitrogen in the course of 20 min as minimum. EFFECT: formation of discrete nanoelements homogeneous by their electric and optic properties on which bases all instruments of quantum and optoelectronics are built. 4 dwg