MEMORY DEVICE WITH DIELECTRIC LAYER BASED ON DIELECTRIC FILMS AND METHOD OF ITS PRODUCING Russian patent published in 2009 - IPC H01L21/784 G11C11/14 B82B1/00 

FIELD: nanotechnology.

SUBSTANCE: invention refers to sphere of semiconductor nanotechnology and can be used for sensitive producing of thin and ultrathin semiconductor films and dielectrics in micro- and optoelectronics, in technologies of computer memory element formation. In memory device with dielectric layer based on dielectric films containing semiconductor base, dielectric layer, conductor layer and current-conducting electrodes, the dielectric layer consists of the first film of a wide-band dielectric spread on the surface of the semiconductor base, a film of the narrow-band dielectric and the second film of the wide-band dielectric. There is also a method of producing of the memory device offered.

EFFECT: increase of operation speed, reliability and creation of the structure with controllable characteristics of capture and storage of charge information, increase of its volume and density.

13 cl, 6 dwg