METHOD OF FORMING SINGLE-CRYSTAL NANOWIRES IN MATRIX OF NATIVE OXIDE Russian patent published in 2013 - IPC H01L21/308 B82B3/00 

FIELD: nanotechnology.

SUBSTANCE: method of forming the single-crystal nanowires in a matrix of native oxide comprises applying to the surface of the single-crystal plate of a mask with the desired topology of the formed single-crystal nanowire, etching of the open areas of the single-crystal plate with providing negative angles to the walls inclination of the etched grooves to the original surface without breaking the continuity of the plate material and the subsequent oxidation of the single-crystal plate to clamp oxide around the conductive material stored in the form of a protrusion. The specified result is achieved also by the fact that prior to the oxidation process a complete or partial removal of the mask is carried out.

EFFECT: ensuring the formation of single-crystal nanowires of the specified geometry in the matrix of native oxide.

2 cl, 2 dwg