METHOD FOR FORMING AN ORDERED ARRAY OF SILICON NANOCRYSTALS OR NANOCLUSTERS IN A DIELECTRIC MATRIX Russian patent published in 2019 - IPC H01L21/205 B82Y30/00 

FIELD: nanotechnologies.

SUBSTANCE: invention can be used to produce nanosized composite structures. Essence of the invention is that the method of forming an ordered array of silicon nanocrystals or nanoclusters in a dielectric matrix includes formation on a substrate of a multilayer film consisting of alternating layers of SiN_x and Si₃N₄, where 0<x<4/3, by a low-frequency plasma-chemical vapor deposition using a mixture of monosilane (SiH₄) and ammonia (NH₃) with a volume ratio [NH₃]/[SiH₄] in range from 1 to 5 at a chamber pressure of 100–250 Pa, a substrate temperature of 20–400 °C and a specific power of discharge of 0.02–0.2 W/cm² followed by annealing the resulting multilayer film in an inert atmosphere at a temperature in range of 800–1,150 °C for at least 5 minutes to produce a multilayer matrix with nanocrystals or nanoclusters.

EFFECT: enabling formation of arrays of Si nanocrystals/nanoclusters with controlled dimensions and packing density in a silicon nitride matrix.

1 cl, 3 dwg