POROUS FILM MADE OF POLYPARAXILILINE AND ITS SUBSTITUTES, METHOD OF THE POROUS FILM MANUFACTURE AND SEMICONDUCTOR DEVICE WITH ITS USE Russian patent published in 2003 - IPC

FIELD: production of polyparaxililine porous film. SUBSTANCE: invention presents the method of manufacture of polyparaxililine or its substitutes porous films with a low dielectric constant and high thermal stability and the semiconductor device, in which the film is used as insulating layer. Such porous films are produced using a sublimation of a cyclic dimer of paraxililine or its substitutes at 30-160 C till formation of a gaseous dimmer and with following pyrolysis of the produced sublimate under temperature from above 800 up to 950 C at the speed of the cyclic dimmer flow from a zone of a sublimation into a zone of pyrolysis up to 0.009 g/min and condensation with simultaneous polymerization on the substrate of the produced paraxililine or its substitutes at (-40 C)-(+25 C) in a zone of polymerization. The process is conducted under pressure of 0.001-0.1 mmHg with following heat treatment of produced polyparaxililine or its substitutes by step by step heating under temperature of 200 C up to 400 C with an interleaving of the heating and aging under a constant temperature in six steps at pressure of 0.001- 0.1 mmHg or in an inert atmosphere. The produced porous film contains 10-50 vol.% and is used the semiconductor device. The device manufactured from a semiconductor member, on the surface of which they formed a layer by a layer a thin metal film of the first layer route, insulating the porous film made from polyparaxililine or from its substitutes. The film of silicon oxide and a metal film of the second layer route, that is electrically connected with a film of the first layer route through via openings. A variant of production of the semiconductor device provides for formation of layers making a multiplayer film route on the substrate. EFFECT: the invention allows to produce a porous film with a low dielectric constant and high thermal stability. 9 cl, 3 dwg