METHOD OF OXIDE COMPOUND EPITAXIAL FILMS OBTAINING Russian patent published in 2008 - IPC H01L21/36 

FIELD: physics.

SUBSTANCE: method of oxide compound epitaxial films obtaining involves creation of film layers on the surface of monocrystal substrates, with chemical composition of the film differing from that of the substrate, by substrate heating in the air and further cooling at room temperature. In this method, the substrate contains chemical components of the target film, and heating is implemented within T₁-T₂ temperature range, where T₁ is the bottom temperature of formation of thermodynamically stable compound, which forms the layers of target film, and T₂ is the starting temperature of the compound decomposition. Due to heating the substrate components are diffused in the surface direction, and in that process they are involved in chemical reaction, with the resulting oxide compounds oriented so, that a target film of a given thickness is formed on the substrate.

EFFECT: simplifies obtaining of stable composite epitaxial films of a wide range of thickness, improves quality due to higher adhesion and stoichiometry of the composition.

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