POLY(α,α,α′,α′-TETRAFLUORO-P-XYLYLENE) FILM, METHOD FOR PREPARATION THEREOF, AND SEMICONDUCTOR DEVICE EMPLOYING IT Russian patent published in 2003 - IPC

FIELD: polymer materials. SUBSTANCE: invention relates to insulating films, which are applied in electronics. poly(α,α,α′,α′-tetrafluoro-o-xylylene) film is prepared by sublimation of octafluoro-p-cyclophane at 30-70 C and pressure 0.001-0.1 mm Hg to form gaseous product followed by pyrolysis at 680-770 C and flow velocity from sublimation zone to pyrolysis zone 0.0060 g/min, condensation simultaneously with supported polymerization of (α,α,α′,α′-tetrafluoro-p-xylylene) obtained in pyrolysis zone at temperature from -40 to +20 C and polymer layer formation velocity 0.26-0.29 mcm/min. Film is further subjected to heat treatment by stepped heating at 200-400 C wherein heating steps are alternated with holding at constant temperature, number of steps being 6 at pressure 0.001- 0.1 mm Hg under inert atmosphere or in air. Film is characterized by dielectric constant no higher than 2,5 and weight loss below 0.05% after heating during at least 1 h at 400 C. Device, in which film is employed, is made from semiconductor support, on the surface of which first layer of intercircuit connections is formed followed by poly(α,α,α′,α′-tetrafluoro-pxylylene) film, silica layer, and second layer of intercircuit connections electrically connected to the first layer of intercircuit connections over through-holes in silica film and insulating film. EFFECT: enabled preparation of film with low dielectric constant and high heat resistance. 7 cl, 3 dwg