GATE THIN-FILM INSULATING MATERIAL OF HIGH DIELECTRIC CONSTANT AND ITS MANUFACTURING METHOD (ALTERNATIVES) Russian patent published in 2007 - IPC H01L21/316 

FIELD: metal-oxide semiconductor technologies.

SUBSTANCE: used as insulating material of high dielectric constant in thin-film gate insulator are solid solutions based on complex oxides in the form of perofskite-like barium-lanthanide polytitanates BaLn₂(Ti_{1 - x}M_x)₄)₁₂, BaLn₂(Ti_{1 - x}M_x)₃O₁₀, BaLn₂(Ti_{1 - x}M_x)₂O₈, (Ba, Ln) BaLn₂(Ti_{1 - x}M_xTa_y)O₅ (Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y; M = Zr, Hf), where x, y = 0 - 1. Methods are proposed for producing this material affording insulator thickness not over 1.5 nm at physical thickness of film not to exceed 3 nm and leakage current not over 0.1 A/cm².

EFFECT: enhanced effectiveness of oxide insulator thickness in metal-oxide-semiconductor structures at desired film thickness and leakage currents.

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