FIELD: measurement of power or energy of infrared radiation and temperature. SUBSTANCE: body of SiC crystal reacts to incident infrared radiation changing its reaction to electric signal. Body of SiC crystal is fixed in mounting fixture which includes AlN substrate and current-conducting mounting layer containing W, WC or W2C2 which links body of SiC crystal electrically and mechanically to substrate. EFFECT: capability to operate at high temperature without any air or water cooling, measurement of high-power infrared radiation, resistance to thermal shock with minimization of dimensions of detector. 11 cl, 9 dwg
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