HIGH-TEMPERATURE CIRCUIT STRUCTURES Russian patent published in 2005 - IPC

FIELD: temperature-sensitive circuits and structures.

SUBSTANCE: according to one of the versions, circuit structure has ceramic chip, electro-conducting mounting layer disposed on the chip and circuit unit which has SiC, AlN and/or Al_xGa_1-xN (x>0,69) disposed on mounting layer. The mounting layer provides mounting and coupling of circuit unit with chip and has linear expansion temperature coefficient being equal to 1,00+-0,06 of linear expansion temperature coefficient of chip and circuit unit. Chip and circuit units both have separate elements. Created high-temperature structures keep its physical integrity at temperatures up to 1300 deg C. Mechanism of measurement of temperature provides basically linear temperature resistance coefficient.

EFFECT: creation of high-temperature circuit structures.

12 cl, 23 dwg