SEMICONDUCTOR SENSOR OF ULTRAVIOLET RADIATION Russian patent published in 2000 - IPC

FIELD: microelectronics, design of semiconductor sensors of ultraviolet radiation. SUBSTANCE: sensor includes substrate, semiconductor layer sensitive to ultraviolet radiation and electrode system built-up with formation of high-resistance parallel sections in semiconductor layer. High-sensitive element is produced from layer of AlN grown epitaxially, substrate is manufactured from monocrystalline sapphire and electrode system is formed in plane of interface of substrate with semiconductor layer. It is most preferable to manufacture electrode system in the form of pair of opposite combs with formation of parallel sections with value of form factor not above 0.01. EFFECT: improved measurement selectivity of ultraviolet radiation in C range and expanded arsenal of facilities used for this purpose. 2 cl, 5 dwg, 2 tbl