ION BEAM GENERATION PROCESS Russian patent published in 2003 - IPC

Abstract RU 2219618 C2

FIELD: electronics; ion beam generation. SUBSTANCE: electron beam and primary ion beam are produced between target and probe by sequential impact with direct electrical, magnetic, and reverse electric fields; after that substrate is placed between target and probe and electric field impact is provided again, target and substrate being electrically interconnected in advance; after that secondary ion beam is produced. EFFECT: enhanced focusing of beam at low intensity of straight-directivity ion beam. 1 cl, 2 dwg

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RU 2 219 618 C2

Authors

Ivashov E.N.

L'Vov B.G.

Stepanchikov S.V.

Dates

2003-12-20Published

2001-12-17Filed