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2 221 314

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Application

2002125480/28, 2002-09-25

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Start date

2002-09-25

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Actual filing date

2002-09-25

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Published

2004-01-10

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Inventor

Grigorashvili Ju.E.Ichkitidze L.P.Mingazin V.T.

(73)

Holder

Moskovskij Gosudarstvennyj Institut Ehlektronnoj Tekhniki Universitet)

WEAK MAGNETIC FIELD SENSOR Russian patent published in 2004 - IPC

Abstract RU 2221314 C1

FIELD: producing thin-film cryogenic devices around superconductors. SUBSTANCE: weak magnetic field sensor has magnesium oxide base insulating substrate and magnetically sensitive member of high-temperature superconductor film in the form of meander, film material having following composition: Bi1,7Pb0,4Sr2Ca2Cu3Ox, EFFECT: reduced size of sensing part and threshold sensitivity in film magnetic flux. 1 cl, 2 dwg

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RU 2 221 314 C1

Authors

Grigorashvili Ju.E.

Ichkitidze L.P.

Mingazin V.T.

Dates

2004-01-10—Published

2002-09-25—Filed

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