DEVICE FOR MICROWAVE VACUUM-PLASMA SURFACE TREATMENT WITH ELECTRON CYCLOTRON RESONANCE Russian patent published in 2004 - IPC

Abstract RU 2223570 C1

FIELD: vacuum-plasma treatment of the material surface of microelectronics, metal and alloys by flows of particles. SUBSTANCE: an open low-quality resonator in the form of a truncated cone, matching the impedances of the load plasma and microwave oscillator, forms a variable electromagnetic field with operating mode E₀₁ directed to the region of electron cyclotron resonance and together with the magnetic system forms a homogeneous directed flow of plasma ions to the treated surface. EFFECT: produced a device for ion treatment of the surface of materials with a high degree of homogeneity and a considerable range of densities of flow of particles. 3 dwg

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RU 2 223 570 C1

Authors

Koshkin V.V.

Dates

2004-02-10—Published

2002-10-18—Filed