FIELD: vacuum-plasma treatment of inert or chemically active gas layers and film materials by flows of ions, nuclei, and radicals in microelectronics. SUBSTANCE: microwave energy is introduced in plasma generation chamber through several channels. Basic energy input to multiple-mode reactor is effected through single-mode waveguide surrounded by multiple-section solenoid to produce electron- cyclone resonance. In addition, microwave energy is introduced into multiple-mode reactor in distributed radial input manner through set of coupling holes or pins provided around external side surface of reactor chamber. EFFECT: provision for treatment of large-diameter strips, improved energy input end uniformity of plasma discharge to raise capacity and uniformity of their microtreatment. 2 cl, 1 dwg
