ELECTRON CYCLOTRON RESONANCE -PLASMA SOURCE TO PROCESS SEMICONDUCTOR STRUCTURES, METHOD TO PROCESS SEMICONDUCTOR STRUCTURES, PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS ( VARIANTS ), SEMICONDUCTOR DEVICE OR INTEGRATED CIRCUIT ( VARIANTS ) Russian patent published in 2003 - IPC

FIELD: microelectronics. SUBSTANCE: invention is related to manufacture of solid devices and integrated circuits with use of SHF stimulation under conditions of electron cyclotron resonance and to technology of plasma processing during fabrication of various semiconductor structures. Electron cyclotron resonance-plasma source to process semiconductor structures in process of manufacture of semiconductor devices or integrated circuits has reactor with substrate holder to position semiconductor structures, evacuation system to ensure superhigh vacuum, magnetic system, SHF generator, SHF radiation power lead-in, system of gas commutation and metered supply of reagents, high-frequency generator with tuner to form constant self-displacement of specimen. Reactor is so designed that is has nonresonance volume on frequencies 2.45 and 1.23 GHz to maintain stable condition. Magnetic system is built for formation of magnetic field on internal section of quarter- wavelength window for input of SHF radiation with intensity 910-940 Gs and with intensity 875 Gs for formation of single- mode plasma discharge with inhomogeneity of density of plasma across cross-section of source under 3% on longitudinal axis of source, in its central part, over length not less than 3.0 cm. There are also proposed semiconductor device and integrated circuit and methods and processes of their manufacture. EFFECT: increased reproducibility of parameters of processed semiconductor structures and devices, improved parameters of devices, elimination of possibility of flaw formation in various regions, accelerated processing of structures. 19 cl, 9 dwg