FIELD: vacuum-plasma treatment of layers and films of materials for microelectronics by flows of ions, atoms and radicals in plasma of inert or chemically active gases. SUBSTANCE: plant for microwave vacuum-plasma treatment of condensed media has microwave generator 1, round single-mode waveguide 3, matched multistep junction 5 and multimode operational chamber 6 connected in series, devices 10 to form longitudinal magnetic field made in the form of multisectional solenoid which sections are put on first two steps of round waveguide 3 of matched junction 5, section 11 with electromagnets installed in pairs for formation of radial rotating magnetic field mounted between devices 10, multified magnetic system 12 fabricated in the form of set of permanent magnets positioned on operational chamber 6 to ensure emergence of electron cyclotrone resonance over its peripheral region. EFFECT: enhanced functional efficiency. 2 cl, 3 dwg
