FIELD: microelectronics, optics, glass and other industries. SUBSTANCE: device designed for treatment of inert or chemically active gases of layers and film materials on ribbon carriers by flows of ions, nuclei, molecules, and radicals has multichannel (distributed) microwave energy input to operational chamber made in the form of rectangular resonator at microwave source oscillation frequency. Microwave oscillations, type Hmnp, with p > m,n are excited in resonator through rectangular waveguide mounted along wide and long wall of resonator and vacuum-tight dielectric coupling holes in common wall arranged to obey definite law. Long narrow slits undisturbing for resonator microwave oscillations are provided in center of opposing side walls of operational chamber to pass ribbon-carried material being treated and to communicate with discharge facilities. Device can treat plates of any shape, width, and length and provides for high energy input and uniform plasma charge. EFFECT: improved capacity and uniformity of material treatment. 3 cl, 1 dwg
