METHOD AND APPARATUS ( VARIANTS ) FOR ELECTROLYTIC POLISHING OF INTERCONNECTIONS IN SEMICONDUCTOR DEVICES Russian patent published in 2004 - IPC

Abstract RU 2224329 C2

FIELD: semiconductor technology. SUBSTANCE: apparatus for electrolytic polishing of metal layer formed on semiconductor plate has electrolyte, socket for polishing, chuck for semiconductor plates, inlet holes for fluid medium and at least one cathode. Chuck for semiconductor plates holds and positions semiconductor plate in socket for polishing. Electrolyte is fed into socket through inlet holes for fluid medium. Then current is applied to electrolyte to carry out electrolytic polishing of semiconductor plate. In correspondence with another approach individual parts of semiconductor plate can be subjected to electrolytic polishing to achieve uniform polishing of semiconductor plate. EFFECT: increased uniformity of semiconductor plated polished electrolytically. 130 cl, 108 dwg

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RU 2 224 329 C2

Authors

Vang Kh'Ju

Dates

2004-02-20Published

1999-07-08Filed