METHOD FOR PRODUCING CARBON NANOSTRUCTURES Russian patent published in 2004 - IPC

FIELD: production of nanostructures of solid body surfaces. SUBSTANCE: proposed method that can be used to produce quantum wires, points, field-effect transistor gates, and other components of device structures involves following operations: substrate surface preparation, its coating with fullerite film, and irradiation with electrons in high-vacuum environment while continuously monitoring characteristics of energy loss of dissipated electrons using spectroscopy method so as to provide for high purity of structures, their resistance to evaporation, and stability of their parameters. EFFECT: improved quality and enhanced parameter reproducibility of carbon nanostructures. 3 cl, 3 dwg