METHOD OF MAKING OHMIC CONTACT Russian patent published in 2024 - IPC H01L21/28 B82Y40/00 

FIELD: electronics.

SUBSTANCE: invention relates to the field of micro- and nanoelectronics, namely to the technology of manufacturing semiconductor devices, and can be used for making contacts to instrument nanostructures in diodes and transistors. Method of making ohmic contact includes preliminary cleaning of p-type semiconductor surface by etching with subsequent successive sputtering by thermal evaporation of conducting layer of silver Ag and layer of gold Au contacting with environment. All operations are carried out in conditions of ultrahigh basic vacuum, etching is carried out with a beam of Ar⁺ ions with energy in range of 300–500 eV until removal of the oxide layer, then the semiconductor surface is irradiated with a beam of Ar⁺ ions with energy in range of 1,500–3,000 eV and a fluence in range of 1⋅10¹²–1⋅10¹⁴ cm^-3, and a layer of silver Ag is deposited directly on the irradiated surface of the semiconductor.

EFFECT: invention enables to make an ohmic contact on a p-type semiconductor layer with a different degree of doping, including ultrathin layers up to thickness of the subnanometre range.

1 cl, 1 ex