METHOD FOR CREATING QUANTUM DOTS FOR ELEMENT BASE OF RADIO ENGINEERING Russian patent published in 2021 - IPC C23C14/35 C01B32/184 B82B3/00 B82Y30/00 B82Y40/00 

FIELD: nanoelectronics.

SUBSTANCE: invention relates to the field of nanoelectronics, namely to the technology of forming nanostructures on the surface of a solid, and can be used to create field-effect transistors, photocells, light-emitting diodes, laser diodes. The method for producing quantum dots includes magnetron sputtering of a target onto a substrate at a constant current in a reaction vacuum chamber, while onto a heat-resistant substrate that can withstand temperatures up to 500°C, by sputtering a target consisting of carbon and aluminum with a ratio of their areas occupied in the target equal to 8:1, a film with a thickness of 1 to 7 micrins is applied, after which the substrate with the film is kept in a reaction vacuum chamber for at least 5 min, with the formation on the film surface of quantum dots with a diameter of 10 to 150 nm with internal cavities and walls made of graphene with impurities of aluminum oxide, moreover, in the reaction vacuum chamber during and after application of the film to the substrate, a constant total partial pressure of a gas mixture of 0.4 Pa (3×10^-3 mm Hg), consisting of 5% oxygen and 95% argon is maintained. Magnetron sputtering of the target is carried out at a substrate temperature of 20°C, the magnetron power released on the target is from 3 to 5 W/cm², the distance between the sputtered target and the substrate is 4 cm.

EFFECT: formation of isolated carbon quantum dots with low adhesion to a film on a thermally stable substrate using a highly productive technology.

1 cl, 1 dwg, 1 ex