FIELD: process engineering.
SUBSTANCE: invention relates to nanotechnologies, particularly, to production of nano orifices, films with nano pores etc. For producing nanosized orifices island structure of fine metal films is used that originates on initial stage of deposition unless film thickness exceeds 2-15 nm, while piercing nanosized orifices is performed by breakdown electric current in depth of laminar structure across metal islands. Island size is unambiguously defined by evaporated film thickness.
EFFECT: hard structure with preset-size nano holes.
2 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING NANOMEMBRANE FILTERS | 2009 |
|
RU2418621C1 |
| METHOD TO PRODUCE NANO-SIZE METAL DIAPHRAGMS | 2007 |
|
RU2393913C2 |
| METHOD FOR PRODUCTION OF NANOSIZE METAL MEMBRANES | 2007 |
|
RU2342187C1 |
| METHOD OF PRODUCING MEMBRANES WITH REGULAR NANOPORES FROM BARRIER-FILM METAL OXIDES | 2009 |
|
RU2405621C2 |
| METHOD AND DEVICE FOR MONITORING TECHNOLOGICAL PARAMETERS OF THE PROCESS OF FORMING HIGH-EFFICIENCY CATALYST ON ELECTRODES OF SOLID OXIDE FUEL CELLS | 2020 |
|
RU2746646C1 |
| METHOD FOR FORMING SMOOTH ULTRATHIN YBCO FILMS WITH HIGH CONDUCTIVITY | 2011 |
|
RU2450389C1 |
| METHOD FOR MANUFACTURING OF OPTICAL FILTER BASED ON GRAPHENE | 2019 |
|
RU2724229C1 |
| METHOD OF PRODUCING MONOPHASE INTERMETALLIC THIN FILM | 2013 |
|
RU2553148C1 |
| METHOD OF MANUFACTURING SENSOR FOR SEMICONDUCTIVE GAS TRANSDUCER | 2006 |
|
RU2319953C1 |
| METHOD OF PRODUCING GERMANIUM FILMS | 2007 |
|
RU2336593C1 |
