FIELD: measurement technology.
SUBSTANCE: integrated accelerometer incorporates silicon sensitive element in the form of pendulum which functions at same time as mobile electrode of capacitive bridge, built-in electron unit, negative feedback circuit containing modulator that converts constant output voltage to alternating and feeds it for supply of capacitive bridge. Ratio of thickness of metallization layer of immobile electrodes to value of gap between conductive pendulum and electrodes corresponds to following relations between temperature coefficients of source of reference voltage, silicon elasticity modulus, silicon and materials of electrodes
where is thickness of metallization layer of electrode; is value of gap between conducting pendulum and electrode; is temperature coefficient of source of reference voltage; is temperature coefficient of elasticity modulus; is temperature coefficient of linear expansion of silicon, is temperature coefficient of linear expansion of material of electrode.
EFFECT: increased operational precision.
2 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
PULSED MICROSYSTEM ACCELEROMETRE | 2010 |
|
RU2432578C2 |
DISPLACEMENT CONVERTER | 2004 |
|
RU2279632C2 |
FEEDBACK AMPLIFIER FOR INTEGRAL TRANSDUCERS | 2010 |
|
RU2431849C1 |
MICROACCELEROMETER | 2012 |
|
RU2490650C1 |
ELECTROSTATIC ACCELERATION METER | 0 |
|
SU1150549A1 |
MICROSYSTEM ACCELEROMETRE | 2009 |
|
RU2450278C2 |
MICROMECHANICAL ACCELEROMETER WITH LOW SENSITIVITY TO THERMOMECHANICAL INFLUENCES | 2020 |
|
RU2746762C1 |
INTEGRAL ACCELEROMETER SENSITIVE ELEMENT | 2013 |
|
RU2526789C1 |
COMPENSATION ACCELEROMETER | 1994 |
|
RU2126161C1 |
ELECTROSTATIC ACCELEROMETER | 2010 |
|
RU2423712C1 |
Authors
Dates
2004-06-27—Published
2002-12-10—Filed