FIELD: measuring engineering.
SUBSTANCE: converter comprises two semiconductive substrates provided with sources and passages separated from the substrates by p-n-junctions. The movable unit is provided with first and second metallized gates insulated from the first and second substrates by spaces. The thickness of the metal layer of the gates depends on the thickness of silicon section of the gate and dielectric layer of the insulation of the channel, values of their linear thermal expansion coefficients, and temperature coefficient of the source voltage at the drain.
EFFECT: enhanced accuracy of measuring.
1 dwg
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