POWER SWITCH CONTROL CIRCUIT BASED ON IGBT OR MIS TRANSISTORS Russian patent published in 2022 - IPC H02M1/08 H03K17/691 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering, including pulsed power converter technology, and is intended for use in various non-contact switching devices for converting and regulating electricity. A power switch control circuit based on IGBTs or MIS transistors, contains an isolating two-winding transformer, a power switch, the first and second complementary bipolar transistors, a single-phase bridge rectifier, a capacitor, a third n-p-n type bipolar transistor, a shunt MIS transistor. The single-phase bridge rectifier includes first and second diodes with combined cathodes and first and second zener diodes with combined anodes, and the secondary winding of the transformer is connected to the diagonal of the bridge rectifier for alternating current. The capacitor is connected in parallel with the output terminals of the bridge rectifier. The first and second complementary transistors are connected by a common emitter to the gate of the shunt MIS transistor. The collector of the first complementary npn type transistor is connected to the positive output terminal of the bridge rectifier, and the collector of the second complementary pnp type transistor is connected to the negative output terminal of the bridge rectifier. The bases of the first and second complementary transistors are combined and connected by means of a resistor to the positive output terminal of the bridge rectifier. Parallel to the secondary winding of the transformer, two series-connected resistors are connected, the common point of which is connected to the base of the third bipolar transistor, the collector of which is connected to the common base of the first and second complementary transistors, and its emitter is connected to the output end of the secondary winding of the transformer. The drain of the shunt MIS transistor is connected to the gate of the power switch, and is also connected by means of a resistor to the beginning of the secondary winding of the transformer. The source of the shunt MIS transistor is connected to the negative output terminal of the bridge rectifier and the negative electrode of the power switch. A resistor is installed between the negative electrode and the gate of the power switch. The primary winding of the transformer is connected to the control device.

EFFECT: increasing the operational reliability of the power switch based on IGBTs or MOS transistors by eliminating false switching of the power transistor switch at high switching speeds and increased supply voltages, limiting the permissible level of surge voltages at the gate of the power transistor switch, ensuring reliable retention of the power transistor in the off state with long pauses.

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