METHOD OF PRODUCING SELF-SUPPORTING CRYSTALLISED SILICON THIN FILM Russian patent published in 2012 - IPC H01L21/324 

FIELD: chemistry.

SUBSTANCE: method of producing a self-supporting crystallised silicon thin film involves at least steps for: (1) obtaining a wafer of material formed from at least three different superposed films, namely a substrate film, a surface silicon film and a carbon-based sacrificial film intercalated between the substrate film and the surface film, (2) heating at least one zone of said wafer so as to melt the silicon present on the surface of said zone and to form a SiC film, adjacent to the film of molten silicon, by reacting said molten silicon with the carbon forming said sacrificial film, (3) solidifying by cooling said molten silicon zone in step (2), and (4) recovering the expected silicon thin film by spontaneous detachment of the SiC film from said substrate film.

EFFECT: simple, cheap method of producing a silicon thin film, while simultaneously achieving recrystallisation of large-grained silicon and detachment of said film from the substrate.

15 cl, 6 dwg