METHOD AND APPARATUS FOR EPITAXIAL GROWTH OF TYPE III-V SEMICONDUCTORS, APPARATUS FOR GENERATING LOW-TEMPERATURE HIGH-DENSITY PLASMA, EPITAXIAL METAL NITRIDE LAYER, EPITAXIAL METAL NITRIDE HETEROSTRUCTURE AND SEMICONDUCTOR Russian patent published in 2012 - IPC H01L21/205 

FIELD: chemistry.

SUBSTANCE: vacuum apparatus for epitaxial growth of type III-V semiconductors has a vacuum chamber in which pressure is kept in a range from approximately 10^-3 mbar to 1 mbar during epitaxial growth, a substrate holder mounted in the vacuum chamber with possibility of attaching and heating substrates, sources for evaporating substances and feeding vapour particles into the vacuum chamber, which are particles of metals in elementary form, metal alloys and dopants, a system for feeding and distributing gases into the vacuum chamber, a source for feeding plasma into the vacuum chamber, a magnetic field generator for creating a magnetic field which gives the plasma the required shape in the vacuum chamber. The vacuum chamber is adapted to conduct diffusive distribution of gas and metal vapour particles therein, activation of gases and metal vapour with the plasma for reaction and formation of a homogeneous epitaxial layer on the heated substrate attached to the substrate holder via gaseous-phase epitaxy, activated by the low-temperature plasma.

EFFECT: possibility of obtaining epitaxial layers at a high rate, at low temperature, large surface area of substrates and without toxic gases.

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